bd240/a/b/ c pnp epitaxial silicon transistor medium power linear and switching applications complement to bd239/a/b/c respectively absolute maximum ratings electrical characteristics (t c =25 c ) * pulse test: pw =350 m s , duty cycle 2.0% pulsed characteristic symbol rating unit collector-emitter voltage : bd240 :bd240a :bd240b :BD240C collector emitter voltage : bd240 :bd240a :bd240b :BD240C emitter base voltage collector current (dc) collector current (pulse) base current collector dissipation ( t c =25 c ) junction temperature storage temperature v ceo v cer v ebo i c i c i b p c t j t stg - 45 - 60 - 80 - 100 - 55 - 70 - 90 - 115 - 5 - 2 - 4 - 0.6 30 150 -65 ~ 150 v v v v v v v v v a a a w c c characteristic symbol test conditions min typ max unit * collector emitter sustaining voltage : bd240 : bd240a : bd240b : BD240C collector cutoff current : bd240/a : bd240b/c collector cutoff current : bd240 : bd240a : bd240b : BD240C emitter cutoff current * dc current gain * collector emitter saturation voltage * base emitter on voltage v ceo ( sus) i ceo i ces i ebo h fe v ce (sat) v be (on) i c = - 30ma, i b = 0 v ce = - 30v, i b = 0 v ce = - 60v, i b = 0 v c e = - 45v, v be = 0 v ce = - 60v, v be = 0 v ce = - 80v, v be = 0 v ce = - 100v, v be = 0 v eb = - 5v, i c = 0 v ce = - 4v,i c = - 0.2a v ce = - 4v, i c = - 1a i c = - 1a, i b = - 0.2a v ce = - 4v, i c = - 1a -45 - 60 - 80 - 100 40 15 - 0.3 - 0.3 - 0.2 - 0.2 - 0.2 - 0.2 - 1 - 0.7 - 1.3 v v v v ma ma ma ma ma ma ma v v 1.base 2.collector 3.emitter to-220 ? 1999 fairchild semiconductor corporation rev. b
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